프로그램

Program

학술대회 안내 Overview
세션 트랙
4월 9일 (목요일)
SS10
차세대 DRAM 커패시터 소재 및 공정
좌장 : 김성근 (한국과학기술연구원), 이웅규 (숭실대학교), 한정환 (서울과학기술대학교), 이상운 (아주대학교) 13:00-15:45
SS10-1
13:00-13:30
차세대 DRAM 커패시터향 (Hf,Zr)O2 기반 박막 및 계면 엔지니어링
*박민혁1+
1서울대학교
SS10-2
13:30-13:45
Plasma-Enhanced Atomic Layer Deposition of Stable MoO2 Thin Films for Next-Generation DRAM Capacitor Electrode
*이재현1, 한정환1+, 한정민1
1서울과학기술대학교
SS10-3
13:45-14:00
Properties of Atomic Layer Deposited Strontium Oxide Thin Films for Fabrication of Strontium Compounds
*Ji Hwan KIM1, Ji-Hoon AHN1+
1Hanyang University
SS10-4
14:00-14:15
Alternative reaction pathway in atomic layer deposition: theorical insights and experimental results of nitride thin films
*Tae Hyun KIM1, Kyeong Hyeon CHOI1, Kyung Jun LEE1, Se Eun KIM1, Ye Rin YANG1, Sang Woon LEE1+
1Ajou University
SS10-5
14:30-15:00
Effects of High-Temperature Deposition on Structural and Physical Properties of High-k ZrO₂ and HfO₂ Thin Films
*Ji-Hoon AHN1+
1Hanyang University
SS10-6
15:00-15:15
SF6 플라즈마와 TiCl4를 이용한 DRAM 커패시터용 ZrO2의 원자층 식각
*김주형1, 정상연1, 김형준1, 이웅규1+
1숭실대학교
SS10-7
15:15-15:30
Strategies to mitigate electrical properties degradation caused by interfacial layer formation in ZrO2-based capacitors with TiN electrodes
*Seungwoo LEE1, Daeyeong KIM2, Hanbyul KIM2, Hansol OH2, Yongjoo PARK2, Youngjin KIM3, Woojin JEON1+
1Kyung Hee University, 2SK trichem, 3Kyonggi University
SS10-8
15:30-15:45
Strategy for forming ultrathin metal films
*Minseok KIM1, GwangMin PARK1, Tae Hwan LEE1, Jihoon JEON1, Seungwan YE1, Jongseo KIM1, Seong Keun KIM1+
1Korea Institute of Science and Technology, Korea University