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학술대회 안내 Overview

세션 트랙

4월 10일 (금요일)

PSS10B

차세대 DRAM 커패시터 소재 및 공정

PSS10B-1

Enhanced Interfacial and Electrical Properties of ZrO₂-based Capacitors Using Sc₂O₃ Interlayer

^*Seo-young CHOI¹, Yeon-Ji JEON¹, Yoonchul SHIN¹, Ji Hwan KIM¹, Chanbin HONG¹, Ji-Hoon AHN¹⁺
¹Hanyang University

PSS10B-2

Grain Boundary Passivation of Polycrystalline ZrO₂ Using Sub-Nanometer Bi₂O₃ via Atomic Layer Deposition

^*Yeon-Ji JEON¹, Soo Jeong LEE², Jin-Sik KIM², Ji-Hoon AHN¹⁺
¹Hanyang University, ²UP chemical

PSS10B-3

Formation of SrTiO3/SrVO3 Perovskite Heterostructures Grown by Atomic Layer Deposition for DRAM Capacitor Applications

^*Kyung Joon LEE¹, Kyeong Hyeon CHOI¹, Tae Hyeon KIM¹, Se Eun KIM¹, Sang Woon LEE¹⁺
¹Ajou University

PSS10B-4

Electrical and Thermal Reliability Analysis of Two-Dimensional Electron Gas-Based Conductive Bridge Random Access Memory

^*Insu OH¹, Ju Young SUNG¹, Chae Hyun LEE¹, Sanghyeok LEE¹, Sang Woon LEE¹⁺
¹Ajou University